• Tekline Korea Co., Ltd.

  • A-813, 184, Jungbu-daero, Giheung-gu, Yongin-si, Gyeonggi-do, Korea
  • TEL : +827077785814
  • EMAIL : tskim@tekline.co.kr
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Analysis

Failure Analysis

Failure analysis of semiconductors and components is essential to identifying and improving the cause of failure during product development and mass production. We provide optimal analysis solution through various failure analysis methods.

 

 

Destructive Analysis

- Decap and Delayer by Chemical

- Decap and Delayer by Laser

- Decap and Delayer by Parallel Lapping

 

 

Chemical Decap and Laser Decap

 

OM Image after Delayer

 

SEM Image after Delayer

 

 

Non-Destructive Analysis

- X-Ray

- Scanning Acoustic Through (SAT)

- Optical Profiler (OP)

- 3D X-Ray Microscopy

- High-Resolution 3D Optical Microscopy

- Time Domain Reflectometry (TDR)

 

 

X-Ray (2D and Tilt)

 

Optical microscopy (OM)

 

SAT Anylysis

 

Optical profiler (OP)

 

3D X-ray microscopy ; Cu Wire

 

3D X-ray microscopy ; Al Wire

 

3D X-ray microscopy ; (a)PCB substrat  (b) TSV void

 

3D X-ray microscopy ; (a)Mini motor  (b) Wire lifting

 

 

 

High-resolution 3D optical microscopy ; Wire Bonding and Gold Bump

 

High-resolution 3D optical microscopy ; WLCSP

 

 

Electrical Analysis

- Emission Microscopy (EMMI)

- InGaAs

- Optical Beam Induced Resistance Change (OBIRCH)

- Conductive Atomic Force Microscopy & Electric Field Microscopy

- Thermal Emission Microscopy

- Nano Probing

 

 

Emission microscopy (EMMI)

 

InGaAs

 

Optical Beam Induced Resistance Change (OBIRCH)

 

Thermal emission analysis image through IC’s front side